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Proceedings Paper

CD-Metrology of EUV masks in the presence of charging: measurement and simulation
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Paper Abstract

The required measurement precision for multilayered EUV mask metrology is set below 0.4 nm three sigma. In addition to limited precision of CD-SEM, there are fundamental physical factors that deteriorate the accuracy of the measurements, the most important of which is charging. It is widely believed that EUV masks are conductive. However, experiments have revealed noticeable charging in CD-SEM measurements of EUV masks that cannot be ignored. In this work, the results of the experiments and simulations of the SEM signals are presented. It was shown that charging affects the metrology in a few ways. The SEM signal shifts at each frame, changes with beam current and also depends on the wall angle of the absorber. The results of the simulations are compared to experimental results.

Paper Details

Date Published: 29 June 2012
PDF: 5 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844108 (29 June 2012); doi: 10.1117/12.999462
Show Author Affiliations
Sergey Babin, abeam Technologies, Inc. (United States)
Sergey Borisov, abeam Technologies, Inc. (United States)
Hidemitsu Hakii, Toppan Printing Co., Ltd. (Japan)
Yasushi Nishiyama, Toppan Printing Co., Ltd. (Japan)
Isao Yonekura, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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