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Proceedings Paper

Coplanar lumped electroabsorption modulator fabricated on the common n-type InP substrate
Author(s): Can Zhang; Song Liang; Li Ma; Baojun Wang; Hongliang Zhu; Wei Wang
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Paper Abstract

A coplanar lumped electroabsorption modulator (Co-LEAM) based on n-type InP substrate is designed and fabricated, which shows a capacitance of 0.62 pF and a high reverse breakdown voltage (VBR) nearly -26 v. Other characteristics are compared with the common LEAM with the back n-electrode.

Paper Details

Date Published: 27 November 2012
PDF: 8 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85550V (27 November 2012); doi: 10.1117/12.999439
Show Author Affiliations
Can Zhang, Institute of Semiconductors (China)
Song Liang, Institute of Semiconductors (China)
Li Ma, Institute of Semiconductors (China)
Baojun Wang, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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