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Proceedings Paper

Three-dimensional analysis of MOVPE in the In-Ga-Al-As-P system in epitaxial reactors by numerical modeling
Author(s): Lev Kadinski
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Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, ; doi: 10.1117/12.998389
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Lev Kadinski, Friedrich-Alexander Univ. Erlangen-Nuermberg (Germany)


Published in SPIE Proceedings Vol. 3944:
Physics and Simulation of Optoelectronic Devices VIII
Rolf H. Binder; Peter Blood; Marek Osinski, Editor(s)

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