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Proceedings Paper

Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge2Sb2Te5 thin films
Author(s): Hun Seo; TaeHee Jeong; Jeong-Woo Park; Cheong Yeon; Dong Cheol Lee; Sang J. Kim; Han-jo Lim
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Paper Abstract

Recently, the demand of high-speed and high-density optical recording media using a direct overwrite scheme is very high.

Paper Details

Date Published: 28 June 1999
PDF: 3 pages
Proc. SPIE 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999, 386410 (28 June 1999); doi: 10.1117/12.997570
Show Author Affiliations
Hun Seo, LG Corporate Institute of Technology (Korea, Republic of)
TaeHee Jeong, LG Corporate Institute of Technology (South Korea)
Jeong-Woo Park, LG Corporate Institute of Technology (South Korea)
Cheong Yeon, LG Corporate Institute of Technology (South Korea)
Dong Cheol Lee, LG Corporate Institute of Technology (South Korea)
Sang J. Kim, Ajou Univ. (South Korea)
Han-jo Lim, Ajou Univ. (South Korea)


Published in SPIE Proceedings Vol. 3864:
Joint International Symposium on Optical Memory and Optical Data Storage 1999
Shigeo R. Kubota; Ryuichi Katayama; Douglas G. Stinson, Editor(s)

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