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Proceedings Paper

Fabrication of deep submicron trenches by means of the g-line proximity photolithography (simulation and experiment)
Author(s): Dmitry Ilkaev; Linard Karklin; Anatoly Krivospitsky; Alexander A. Orlikovsky
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Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, ; doi: 10.1117/12.990056
Show Author Affiliations
Dmitry Ilkaev, Moscow State Univ. (Russia) (United States)
Linard Karklin, SIGMA-CAD (United States)
Anatoly Krivospitsky, Institute of Physics and Technology (Russia)
Alexander A. Orlikovsky, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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