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Effect of bulk doping on the etching rate of silicon by halogen atoms
Author(s): Andrey I. Krechetov
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Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, ; doi: 10.1117/12.982844
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Andrey I. Krechetov, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 1723:
LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces

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