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Proceedings Paper

Voltage control of magnetism in ferromagnetic structures
Author(s): L. Herrera Diez; W. Lin; A. Bernand-Mantel; L. Ranno; D. Givord; L. Vila; P. Warin; A. Marty; N. Lei; T. Devolder; J. V. Kim; N. Vernier; P. Lecoeur; D. Ravelosona
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Paper Abstract

Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices.

Paper Details

Date Published: 9 October 2012
PDF: 7 pages
Proc. SPIE 8461, Spintronics V, 84610Y (9 October 2012); doi: 10.1117/12.982039
Show Author Affiliations
L. Herrera Diez, Institut NÉEL, CNRS-UJF (France)
W. Lin, Institut d'Électronique Fondamentale, CNRS (France)
A. Bernand-Mantel, Institut NÉEL, CNRS-UJF (France)
L. Ranno, Institut NÉEL, CNRS-UJF (France)
D. Givord, Institut NÉEL, CNRS-UJF (France)
L. Vila, Commissariat à l'Énergie Atomique (France)
P. Warin, Commissariat à l'Énergie Atomique (France)
A. Marty, Commissariat à l'Énergie Atomique (France)
N. Lei, Institut d'Électronique Fondamentale, CNRS (France)
T. Devolder, Institut d'Électronique Fondamentale, CNRS (France)
J. V. Kim, Institut d'Électronique Fondamentale, CNRS (France)
N. Vernier, Institut d'Électronique Fondamentale, CNRS (France)
P. Lecoeur, Institut d'Électronique Fondamentale, CNRS (France)
D. Ravelosona, Institut d'Électronique Fondamentale, CNRS (France)


Published in SPIE Proceedings Vol. 8461:
Spintronics V
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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