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Proceedings Paper

Design of dual-color ROIC with double sharing capacitor
Author(s): Jie Zhou; Rui-jun Ding; Lei Gao; Guo-qiang Chen; Pan Wang; Honglei Chen
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Paper Abstract

A readout integrated circuit (ROIC) for 320× 256 middle-wave and long-wave infrared focal plane arrays, is studied in this paper. This circuit operates in integrating-while-reading (IWR) mode with the frame rate higher than 100fps. A novel DI structure is used for signal acquisition of middle wave while BDI structure for long wave. It is common that trade-offs always exist between chip area and performances in integrated circuits design. In order to get high injection efficiency for BDI structure with small area, a four-transistor amplifier with a gain of 82dB is designed. The charge capacity of ROIC is also a key performance parameter when considering the noise and the large middle-wave and longwave photocurrent (up to 5nA and 100nA, respectively). A structure named double sharing capacitors (DSC) presented in this paper will be an effective solution to getting a large capacity in the limited 50 μm x 50 μm pitch area. DSC means that each integrating capacitor has two kinds of shares. One is between the integrating capacitor and another integrating capacitor which is in the adjacent pixel, and the other is between the integrating capacitor and the holding capacitor in the same pixel. By adopting the 0.35μm 2P4M mixed signal process, the DSC architecture can make the total effective charge capacity as high as 70Me- per pixel with 3V output range. According to the simulation results, this circuit works well under 5V power supply and achieves 2.5MHz data transmission rate, less than 0.1% nonlinearity. Its total power consumption is less than 110mW.

Paper Details

Date Published: 5 December 2012
PDF: 8 pages
Proc. SPIE 8562, Infrared, Millimeter-Wave, and Terahertz Technologies II, 85620B (5 December 2012); doi: 10.1117/12.981854
Show Author Affiliations
Jie Zhou, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Rui-jun Ding, Shanghai Institute of Technical Physics (China)
Lei Gao, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Guo-qiang Chen, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Pan Wang, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)
Honglei Chen, Shanghai Institute of Technical Physics (China)
Graduate Univ. of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 8562:
Infrared, Millimeter-Wave, and Terahertz Technologies II
Cunlin Zhang; Xi-Cheng Zhang; He Li; Sheng-Cai Shi, Editor(s)

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