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Proceedings Paper

Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node
Author(s): Sukjong Bae; Jin Choi; Sung Hoon Park; Byung Gook Kim; Chan-Uk Jeon
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Paper Abstract

One of the concerned phenomena that influencing to the performance of electron beam mask writer is contamination of deflector. Previous studies show that the relation between the deflector contamination and pattern placement error. In fact, the source of the contamination of deflector was not defined clearly yet. However, the fact that of deflector contamination clearly influences the pattern placement error on mask fabrication. We think that there is no detailed investigation about the effect of deflector contamination on the pattern placement error of production photomask. This paper will describe the effect of e-beam positioning error due to the contamination of deflector in electron optic system. To reduce the placement error by the deflector contamination circumstance the e-beam drift was evaluated in various conditions of deflection based on the theoretical assumption and our own modeling, and optimization of the deflection condition. Furthermore, we will present the requirements on position accuracy of deflector for the photomask of sub 20nm device node.

Paper Details

Date Published: 30 June 2012
PDF: 8 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410C (30 June 2012); doi: 10.1117/12.981613
Show Author Affiliations
Sukjong Bae, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung Hoon Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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