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Proceedings Paper

Preparation and characterization of GaP colloidal nanoparticles and films
Author(s): M. Iacob; Emil Rusu; S. Pyshkin; V. Ursaki; T. Gutsul; John Ballato
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Paper Abstract

In this communication, we present results of investigations of the influence of technological conditions upon the properties of GaP nanoparticles produced by using a new precursor as a source of Ga atoms. The obtained nanoparticles were investigated by means of XRD, EDAX, and ТЕМ as well as by means of Raman light scattering and photoluminescence spectroscopy. The sizes of nanoparticles obtained with gallium acetylacetonate as a source of gallium are in the range of 10-40 nm according to estimations from TEM analysis. These values correlate with the position of the short-wavelength emission maximum in the photoluminescence spectra. A method of electrophoretic deposition of GaP nanoparticles from colloidal organosol solutions was elaborated. Raman spectra and XRD patterns, as well as optical transmission spectra have been measured for layers of GaP nanoparticles produced by this method.

Paper Details

Date Published: 1 November 2012
PDF: 7 pages
Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84111V (1 November 2012); doi: 10.1117/12.981560
Show Author Affiliations
M. Iacob, Institute of Chemistry (Moldova)
Emil Rusu, D. Ghitsu Institute of Electronic Engineering and Nanotechnology (Moldova)
S. Pyshkin, Institute of Applied Physics (Moldova)
Clemson Univ. (United States)
V. Ursaki, Institute of Applied Physics (Moldova)
T. Gutsul, D. Ghitsu Institute of Electronic Engineering and Nanotechnology (Moldova)
John Ballato, Clemson Univ. (United States)


Published in SPIE Proceedings Vol. 8411:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
Paul Schiopu; Razvan Tamas, Editor(s)

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