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Proceedings Paper

Imaging characteristics of binary and phase shift masks for EUV projection lithography
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Paper Abstract

Projection lithography at wavelengths in the extreme ultraviolet spectral range between 5 and 20 nm (EUV-lithography) employs reflective optical components including masks. This article applies rigorous electromagnetic field (EMF) simulation in combination with accurate projection image modeling to explore the impact of typical mask geometry parameters on the characteristics of lithographic processes. This includes telecentricity and shadowing effects resulting from the off-axis illumination in EUV systems and mask induced aberration{like effects. The importance of these effects for several alternative mask concepts including attenuated and alternating phase shift masks is investigated.

Paper Details

Date Published: 18 December 2012
PDF: 10 pages
Proc. SPIE 8550, Optical Systems Design 2012, 85503K (18 December 2012); doi: 10.1117/12.981444
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)


Published in SPIE Proceedings Vol. 8550:
Optical Systems Design 2012
Laurent Mazuray; Rolf Wartmann; Andrew P. Wood; Marta C. de la Fuente; Jean-Luc M. Tissot; Jeffrey M. Raynor; Daniel G. Smith; Frank Wyrowski; Andreas Erdmann; Tina E. Kidger; Stuart David; Pablo Benítez, Editor(s)

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