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Proceedings Paper

Photomask repair technology by using gas field ion source
Author(s): Fumio Aramaki; Tomokazu Kozakai; Osamu Matsuda; Osamu Takaoka; Yasuhiko Sugiyama; Hiroshi Oba; Kazuo Aita; Anto Yasaka
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Paper Abstract

Recently, most of defects on high-end masks are repaired with electron beam (EB). The minimum repairable dimension of the current state-of-the-art repair systems is about 20-30 nm, but that dimension is not small enough to repair the next generation masks. Meanwhile, new molybdenum silicide (MoSi) films with high cleaning durability are going to be provided for an alternative technology, but the etching selectivity between new MoSi and quartz under EB repair process is not high enough to control etching depth. We developed the focused ion beam (FIB) technology that uses light ions emitted from a gas field ion source (GFIS). In this study, the performance of our developed GFIS mask repair system was investigated by using new MoSi (HOYA-A6L2). Specifically, the minimum repairable dimension, image resolution, imaging damage, etching material selectivity and through-focus behavior on AIMS were evaluated. The minimum repairable dimension was only 11 nm that is nearly half of that with EB. That result suggests that GFIS technology is a promising candidate for repairing the next generation masks. Meanwhile, the etching selectivity between A6L2 and quartz was 6:1. Additionally, the other evaluations on AIMS showed good results. Those results demonstrate that GFIS technology is a reliable solution of repairing new MoSi masks with high cleaning durability.

Paper Details

Date Published: 30 June 2012
PDF: 6 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410D (30 June 2012); doi: 10.1117/12.981167
Show Author Affiliations
Fumio Aramaki, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Osamu Takaoka, SII NanoTechnology Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Hiroshi Oba, SII NanoTechnology Inc. (Japan)
Kazuo Aita, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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