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Proceedings Paper

New paradigm for effective particle removal cleaning of EUV mask
Author(s): Jinsang Yoon; Han-Shin Lee; Hyoyeon Kim; Heungsuk Oh; Jaehyuck Choi; Paul Chung; Inkyun Shin; Chanuk Jeon
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Paper Abstract

Spin cleaning tools have advantages in cross contamination compared to bath cleaning tools. Although spin speed is one of key parameters to increase the cleaning efficiency of the spin cleaning tools, its optimization has been limited due to the generation of ESD (Electrostatic discharge) damage to optical masks. EUV masks, however, consist of more "stable" materials in terms of ESD damage so that it is allowed to increase spin speed to improve cleaning performance for EUV mask. In this paper, we showed particle removal efficiencies dependent on mask spin speed for megasonic, nano-binary, or the combination module of those two cleaning mechanisms. We also demonstrated that different characteristics of particle removal efficiency as a function of spin speed for megasonic and nano-binary cleanings can be predicted from simulation of particle trajectory in liquid medium and liquid hitting rates on mask spinning at various spin speeds. This work clearly signifies that it is possible to improve cleaning performance through optimization of known parameters.

Paper Details

Date Published: 30 June 2012
PDF: 9 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410X (30 June 2012); doi: 10.1117/12.979820
Show Author Affiliations
Jinsang Yoon, Samsung Electronics Co., Ltd. (Korea, Republic of)
Han-Shin Lee, Samsung Electronics Co., Ltd. (Korea, Republic of)
Hyoyeon Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Heungsuk Oh, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jaehyuck Choi, Samsung Electronics Co., Ltd. (Korea, Republic of)
Paul Chung, Samsung Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, Samsung Electronics Co., Ltd. (Korea, Republic of)
Chanuk Jeon, Samsung Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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