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Proceedings Paper

The evolution and mechanisms of unintentional doping in ZnO epitaxial growth
Author(s): Kongping Wu; Shunming Zhu; Shulin Gu
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Paper Abstract

In this study, the authors investigate the evolution of the electrical and optical properties of ZnO epilayers grown by the metal-organic chemical vapor deposition method on c-sapphire substrates. The electrical and optical properties of ZnO buffer were investigated by temperature-dependent Hall (TDH), CV and PL. According to fit TDH data, two shallow donors were found in ZnO buffer film, with their activation energy at about 50meV and 10meV, respectively. The shallow donor at the energy of about 50meV has also been assigned from fitted results of PL spectra. According to the reported results and our experiments, the shallow donor at 50meV has then been ascribed to the diffused Al from sapphire during high temperature annealing and epitaxial growth process. All these reveal that the high background-carrier concentration in the HT-grown ZnO epilayer originates from the thermally enhanced diffusion of Al atoms from the sapphire substrate. Therefore, the AlZn shallow donors should be the main origin of the high background-carrier concentration in the HT-grown ZnO epilayers.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841935 (15 October 2012); doi: 10.1117/12.979744
Show Author Affiliations
Kongping Wu, Anhui Univ. of Science and Technology (China)
Shunming Zhu, Nanjing Univ. (China)
Shulin Gu, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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