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Proceedings Paper

The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure
Author(s): B. L. Guan; G. Z. Shi; Q. Wang; X. Guo; G. D. Shen
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Paper Abstract

Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al0.8Ga0.2As defect layer in 1D photonic crystal structure. The results indicated that one-dimensional PC with a sheet of defect layer provides a parent structure on which laser beam can be well engineered without the expense of the macroscopic structural integrity.

Paper Details

Date Published: 29 November 2012
PDF: 5 pages
Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855209 (29 November 2012); doi: 10.1117/12.979656
Show Author Affiliations
B. L. Guan, Beijing Univ. of Technology (China)
G. Z. Shi, Beijing Univ. of Technology (China)
Q. Wang, Beijing Univ. of Technology (China)
X. Guo, Beijing Univ. of Technology (China)
G. D. Shen, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 8552:
Semiconductor Lasers and Applications V
Ning Hua Zhu; Jinmin Li; Frank H. Peters; Changyuan Yu, Editor(s)

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