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Proceedings Paper

OPC and verification for LELE double patterning
Author(s): Kellen Arb; Chris Reid; Qiao Li; Evgueni Levine; Pradiptya Ghosh
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Paper Abstract

LELE double patterning technology is being deployed for 20nm production. With the use of two separate litho-etch steps in the lithography of one layer, LELE doubles the pitch achievable in the tradional single litho-etch step. However, as wavelength of the light used in each litho-etch step is as before, the need for OPC remains, and is even more crucial.

In this paper, we will present the needs and mechanisms for simultaneous OPC for both masks, the extra freedom avaliable in DP OPC, and the extra consideration needed in developing LELE OPC recipe such as SRAF insertion. biasing.

Paper Details

Date Published: 8 November 2012
PDF: 9 pages
Proc. SPIE 8522, Photomask Technology 2012, 85221B (8 November 2012); doi: 10.1117/12.979143
Show Author Affiliations
Kellen Arb, Mentor Graphics Corp. (United States)
Chris Reid, Mentor Graphics Corp. (United States)
Qiao Li, Mentor Graphics Corp. (United States)
Evgueni Levine, Mentor Graphics Corp. (United States)
Pradiptya Ghosh, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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