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Proceedings Paper

Results of proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)
Author(s): Elmar Platzgummer; Christof Klein; Hans Loeschner
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Paper Abstract

First 50nm HP and 24nm iso line scanning stripe exposures with 1.4nm 1sigma stripe butting are shown of a proof-ofconcept electron multi-beam Mask Exposure Tool (eMET POC), operating the column with an Aperture Plate System (APS), providing 256k (k=1024) programmable beams of 20nm beam size and 50keV beam energy at substrate within 82μm × 82μm beam array fields. Multi-beam proximity effect correction (PEC) is shown with long range corrections by local dose adjustments. The capability of exposing OPC jog patterns down to 1nm jog height is demonstrated as well as the possibility to expose complex ILT (inverse lithography techniques) patterns at no loss of throughput. The possibility to use low sensitive pCAR resist material with 80μC/cm2 exposure dose is shown. The novel electron-optical column is suitable for Alpha, Beta and multi-generational HVM tools.

Paper Details

Date Published: 30 June 2012
PDF: 6 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410B (30 June 2012); doi: 10.1117/12.978999
Show Author Affiliations
Elmar Platzgummer, IMS Nanofabrication AG (Austria)
Christof Klein, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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