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Proceedings Paper

Optical properties of SbSI heterostructures
Author(s): B. Toroń; M. Nowak; A. Grabowski; M. Kępńiska; J. Szala; T. Rzychoń
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Paper Abstract

The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.

Paper Details

Date Published: 24 October 2012
PDF: 8 pages
Proc. SPIE 8497, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI, 84971K (24 October 2012); doi: 10.1117/12.978937
Show Author Affiliations
B. Toroń, Silesian Univ. of Technology (Poland)
M. Nowak, Silesian Univ. of Technology (Poland)
A. Grabowski, Silesian Univ. of Technology (Poland)
M. Kępńiska, Silesian Univ. of Technology (Poland)
J. Szala, Silesian Univ. of Technology (Poland)
T. Rzychoń, Silesian Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8497:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
Shizhuo Yin; Ruyan Guo, Editor(s)

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