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Proceedings Paper

Performance Of A Linear Multiplexed MWIR FPA Featuring Buffered Direct Injection
Author(s): J. J. Forsthoefel; R. M. Davis; C. A. Niblack; J. E. Doles
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Paper Abstract

Initial evaluation of the performance characteristics of a 1 x 128 dual multiplexed MWIR FPA assembly are discussed. The CMOS multiplexer individually buffers the input to each element of the photovoltaic indium antimonide (InSb) detector array. Individual charge amplifiers allow signal integration on an integration capacitor located within each channel of the multiplexer. Two different capacitance values can be digitally selected to allow high sensitivity in low incident background or high storage capacity for high background applications. A description of the multiplexer architecture is presented. In the high sensitivity mode of operation, the detector charge storage capacity is 3.5 x 106 electrons with an electronic sensitivity of 0.6 μV/electron. A larger storage capacity of 3.5 x 107 electrons can be selected in a lower sensitivity mode. The InSb detectors have spectral response in the 1 to 5.5 μm region. The detectors operate at near zero bias so dark current non-uniformities are minimized and operating temperatures of 100 to 120 degrees Kelvin are practical. Performance characteristics discussed will include D*, signal linearity, read noise, responsivity, and quantum efficiency.

Paper Details

Date Published: 8 January 1990
PDF: 9 pages
Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); doi: 10.1117/12.978587
Show Author Affiliations
J. J. Forsthoefel, Cincinnati Electronics Corporation (United States)
R. M. Davis, Cincinnati Electronics Corporation (United States)
C. A. Niblack, Cincinnati Electronics Corporation (United States)
J. E. Doles, Cincinnati Electronics Corporation (United States)


Published in SPIE Proceedings Vol. 1157:
Infrared Technology XV
Irving J. Spiro, Editor(s)

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