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Proceedings Paper

Far-Infrared Cyclotron Resonance Studies Of Impurity Scattering In Ge, GaAs And InSB
Author(s): Hiromi Kobori; Tyuzi Ohyama; Eizo Otsuka
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Paper Abstract

Contribution of impurity scattering to the electron cyclotron resonance linewidth (inverse relaxation time) has been studied in the quantum limit, after subtracting the contribution of phonon scattering, for typical semiconductors Ge, GaAs and InSb. To our surprise, dependence of inverse relaxation time on temperature, magnetic field and impurity concentration is the same for neutral and ionized impurities.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978533
Show Author Affiliations
Hiromi Kobori, Osaka University (Japan)
Tyuzi Ohyama, Osaka University (Japan)
Eizo Otsuka, Osaka University (Japan)


Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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