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Proceedings Paper

Millimeter And Submillimeter Wave Optical And Dielectric Properties Of Single Crystal High Purity Silicon
Author(s): Mohammed Nurul Afsar
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Paper Abstract

The single crystal silicon is a monatomic material. The lattice vibration absorption peaks appear around 18,000 GHz (600 wavenumber per centimeter). The only other absorption process present in the entire millimeter and submillimeter wave region is the free carrier absorption which centers around 60 GHz (5 mm in wavelength, 2 wavenumber per centimeter). The free carrier absorption can be reduced in two way: by making the material ultra pure or by introducing deep trap impurities while manufacturing. The resistivity increases in both cases. Complex refractive index, complex dielectric permittivity and loss tangent spectra on several hyperpure silicon specimens will be presented as a function of frequency and resistivity and compared.

Paper Details

Date Published: 18 November 1989
PDF: 1 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978510
Show Author Affiliations
Mohammed Nurul Afsar, Tufts University (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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