Share Email Print

Proceedings Paper

High Frequency Semiconductor Heterostructure Device Analysis
Author(s): Clifford M. Krowne; Gregory B. Tait
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Two-terminal heterostructure diodes present many potential opportunities for high frequency operation, even into the millimeter wave frequency regime. Motivated by this fact, we have developed an algorithm which is globally convergent for solving the nonlinear Poisson equation. By appropriate numerical techniques, the nonlinear Poisson equation is coupled to the current continuity equations which can then be employed for high frequency, small signal, ac simulations. Numerical results for the AlyGa1-yAs system with layers as thin as a few hundred angstroms in thickness are provided.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978507
Show Author Affiliations
Clifford M. Krowne, Naval Research Laboratory (United States)
Gregory B. Tait, Naval Research Laboratory (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

© SPIE. Terms of Use
Back to Top