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Proceedings Paper

Submillimeter Wave Low Temperature Admittance Of N-GaAs AND InP Diode Structures Using Transport Analysis
Author(s): Clifford M. Krowne
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Paper Abstract

Numerical simulation results for n+nn+ GaAs and InP diode structures in the 1-3 THz frequency range are presented. Cryogenic temperatures from 4 through about 77 K are examined to obtain the two-terminal admittance. Earlier work has suggested possible negative differential conductivity (NDC) at or below 4.2 K, but no consistent NDC above 77 K. Implications of the Monte Carlo data for generation of submillimeter waves at these intermediate temperatures is discussed.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978442
Show Author Affiliations
Clifford M. Krowne, Naval Research Laboratory (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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