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Proceedings Paper

An Optoelectronic Technique For S-Parameter Measurements Of GaAs Monolithic Integrated Circuits
Author(s): P. Polak-Dingels; H.-L. A. Hung; K. J. Webb; T. T. Lee; T. Smith; C. H. Lee
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Paper Abstract

An optical technique using picosecond pulses has been developed to characterize the magnitude and phase of the frequency response of a gallium arsenide (GaAs) monolithic integrated circuit in the millimeter-wave frequency range. The results of the complex S-parameters of an amplifier obtained using this technique were compared with those obtained using the network analyzer method.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978335
Show Author Affiliations
P. Polak-Dingels, The Laboratory for Physical Sciences (United States)
H.-L. A. Hung, COMSAT Laboratories (United States)
K. J. Webb, University of Maryland (United States)
T. T. Lee, COMSAT Laboratories (United States)
T. Smith, COMSAT Laboratories (United States)
C. H. Lee, University of Maryland (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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