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Proceedings Paper

Numerical Simulation Of The Diocotron Instability In Planar Diode Geometry
Author(s): H. C. Chen; H. S. Uhm
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Paper Abstract

The diocotron instability for sheared, relativistic electron flow in a planar diode geometry with major fields Ex(x), Bz(x), and Vv(x) has been studied numerically by using a two-dithensional electromagnetic relativistic particle-in-cell code. The growth rate and real oscillation frequency are obtained and compared to the analytical results for a tenuous electron flow.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978329
Show Author Affiliations
H. C. Chen, Naval Surface Warfare Center (United States)
H. S. Uhm, Naval Surface Warfare Center (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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