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Proceedings Paper

The door opener for EUV mask repair
Author(s): M. Waiblinger; R. Jonckheere; Tristan Bret; D. Van den Heuvel; C. Baur; G. Baralia
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Paper Abstract

The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEMinvisible multilayer defects and blank defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and through-focus wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. We will apply this new strategy on real defects and verify the repair quality using state of the art EUV wafer printing technology.

Paper Details

Date Published: 30 June 2012
PDF: 10 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410F (30 June 2012); doi: 10.1117/12.978285
Show Author Affiliations
M. Waiblinger, Carl Zeiss SMS GmbH (Germany)
R. Jonckheere, IMEC (Belgium)
Tristan Bret, Carl Zeiss SMS GmbH (Germany)
D. Van den Heuvel, IMEC (Belgium)
C. Baur, Carl Zeiss SMS GmbH (Germany)
G. Baralia, Carl Zeiss SMS GmbH (Germany)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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