Share Email Print

Proceedings Paper

Study of EUV mask inspection using projection EB optics with programmed pattern defect
Author(s): Ryoichi Hirano; Hidehiro Watanabe; Susumu Iida; Tsuyoshi Amano; Tsuneo Terasawa; Masahiro Hatakeyama; Takeshi Murakami
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

EUV lithography with 13.5nm exposure wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 16nm half pitch (hp) node device and beyond. High sensitivity EUV mask pattern defect detection is one of the major issues to realize the device fabrication by using the EUV lithography. In order to achieve the inspection sensitivity and the applicability for 1x node, a projection electron microscopy (PEM) system; which enables us to make the inspection in high resolution and high speed as compared with conventional DUV and EB inspection systems is employed. Applying the PEM system to 16nm hp node defect inspection, we designed the system with high electron energy, low aberration optics. To guarantee the quality of the 16nm node EUV mask, corresponding size programmed defect masks are designed, and PEM system defect detectability is evaluated by using the current system for 2X nm generation. Also, the defect printability is verified by simulation. In this paper, we described targeted defect detection size and show the specification of 16nm hp node PEM system and the verification.

Paper Details

Date Published: 29 June 2012
PDF: 7 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84411G (29 June 2012); doi: 10.1117/12.978240
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masahiro Hatakeyama, EBARA Corp. (Japan)
Takeshi Murakami, EBARA Corp. (Japan)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

© SPIE. Terms of Use
Back to Top