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Proceedings Paper

Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector
Author(s): Yi Zhou; Jianxin Chen; Qingqing Xu; Zhicheng Xu; Chuan Jin; Jiajia Xu; Li He
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Paper Abstract

Dark current characteristics of long wavelength InAs/GaSb superlattice (SL) detectors have been studied in this paper. The long wavelength SL structure consists of periodic 14 monolayers (MLs) InAs and 7 MLs GaSb with 50% cutoff wavelength around 11 μm. Three InAs/GaSb superlattice detectors of PBIN structure were grown at different temperatures. Wet chemical etching was used to define device mesa. SiO2 was used for device passivation to suppress the sidewall leakage current. Electron barriers were inserted between the absorber region and P-type conducting region to reduce the bulk dark current. The detectors grown at 380oC have the lowest dark current densities as 0.01A/cm2 and the best R0A value as 13 Ωcm2. We simulated four main dark current mechanisms. The result shows that the intrinsic carrier density is extracted to be 3.5E15 cm-3 which matches the C-V measurement very well. And the GR and trap assisted tunnel current dominate the dark current of the device due to the large trap densities and short GR lifetimes.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841904 (15 October 2012); doi: 10.1117/12.978226
Show Author Affiliations
Yi Zhou, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Qingqing Xu, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Chuan Jin, Shanghai Institute of Technical Physics (China)
Jinan Univ. (China)
Jiajia Xu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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