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Proceedings Paper

Study on ICP dry etching of GaSb and InAs/GaSb super lattices
Author(s): Xiangfeng Zhang; Lixue Zhang; Hongfei Zhang; Liang Zhang; Jiaxin Ding; Guansheng Yao; Lei Zhang; Xiaolei Zhang; Liwen Wang; Zhenyu Peng
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Paper Abstract

Inductively coupled plasma (ICP) etching of GaSb and InAs/GaSb super lattices were performed using Cl2/Ar plasma. The effects of GaSb of etching time, Cl2: Ar ratio and RF power on etching rates were investigated. It is found that the etching rates were relatively low when etch time was less than 2 min, After etching for 3 min, the etching rates was about 1.3 μm/min as a result of constant, also, the etching rate was increased monotonically with the increasing of Cl2 proportion, and reaches at 4.14 μm/min when the Cl2 concentration is 80%. In contrast, the peak value of etching rate of InAs/GaSb super lattices is 1.37 μm/min and the increase extent of etching rates of InAs/GaSb super lattices was much lower than that of GaSb, mainly owing to the insensitivity of InAs to the Cl2 concentration. In addition, the etching rates of GaSb increased slowly with the increasing of RF power, which indicated the less efficiency influence of RF power on etching rate. The surface morphology of etched InAs/GaSb super lattices was characterized by WYKO HD3300 head measurement system, which suggested that the surface morphology was becoming rough with the increase of Cl2 percentage. When the concentration reaches 60%, the surface morphology was unacceptable. The results showed that contrast to wet chemical etching, dry etching can form smoother pattern, which indicates the promising application in fabricating fine devices.

Paper Details

Date Published: 15 October 2012
PDF: 8 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191C (15 October 2012); doi: 10.1117/12.978177
Show Author Affiliations
Xiangfeng Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Lixue Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Northwestern Polytechnical Univ. (China)
Hongfei Zhang, Office of Army Aviation (China)
Liang Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Jiaxin Ding, Luoyang Optoelectro Technology Development Ctr. (China)
Guansheng Yao, Luoyang Optoelectro Technology Development Ctr. (China)
Lei Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Xiaolei Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Liwen Wang, Luoyang Optoelectro Technology Development Ctr. (China)
Zhenyu Peng, Luoyang Optoelectro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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