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Proceedings Paper

Application Of Plasma Diagnostic Techniques To Dry Etching Process Control
Author(s): V. G. I. Deshmukh; T. I. Cox; A. J. Hydes; D. A. O. Hope
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Paper Abstract

In this paper, the background to a strategy for effecting real-time control of a dry etching process is discussed. The process chosen as the vehicle for the demonstration of the required control concepts is the reactive ion etching of organic polymer films in oxygen plasmas. The role of plasma diagnostic techniques in providing a specification of the etch process in terms of fundamental physical parameters is given. An example of their use is provided by considering the transference of an etching process between two markedly different etchers. Etch processes are also discussed as being representable as process response surfaces in a multidimensional space. The generation of these surfaces using response surface methodology and radial basis function approaches are described. Finally, a combination of plasma diagnostic methods and the parametric models is considered in the guise of a dynamic real-time control system for a dry etch process.

Paper Details

Date Published: 30 January 1990
PDF: 10 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978068
Show Author Affiliations
V. G. I. Deshmukh, Royal Signals and Radar Establishment (United Kingdom)
T. I. Cox, Royal Signals and Radar Establishment (United Kingdom)
A. J. Hydes, Royal Signals and Radar Establishment (United Kingdom)
D. A. O. Hope, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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