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Proceedings Paper

Electron Cyclotron Resonance CVD Planarization and Trench-Fill Processes
Author(s): D. R. Denison; Chien Chiang; David B. Fraser
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Paper Abstract

An electron cyclotron resonance (ECR) generated oxygen plasma has been used for the chemical vapor deposition (CVD) of Si02 by reacting the oxygen plasma beam with adsorbed silane. This study was done to define the process window for the deposition of planarized Si02 over metal interconnect topographies with aspect ratio (ratio of step height to gap width) of up to 3 to 1 and for silicon trench fill with aspect ratio up to 5 to 1. It is found that the ratio of resputter rate provided by rf bias on the substrate to the deposition rate, typically 20 to 55 percent, determines the maximum aspect ratio space that can be filled. The system parameters considered are silane flow rate, oxygen to silane flow ratio, rf bias power density, and microwave power.

Paper Details

Date Published: 30 January 1990
PDF: 6 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978055
Show Author Affiliations
D. R. Denison, Lam Research Corp. (United States)
Chien Chiang, Intel Corporation (United States)
David B. Fraser, Intel Corporation (United States)

Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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