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Proceedings Paper

Advanced 200 nm Gate Profile Fabrication With Reactive Ion Etching
Author(s): H. Hubner; W. Pilz; G. Belle; M. Franosch
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Paper Abstract

A processing sequence for the fabrication of Y-shaped profiles for HEMTs and MESFETs using electron beam lithography (EBL) and reactive ion etching (RIE) will be presented. On the top of a tri-layer resist system the gate line is defined by EBL and transferred to the substrate by RIE without expansion of lateral dimensions. The enlargement of the upper part of the profile is done by isotropic and anisotropic RIE steps. The process has been optimized for a gate length of 200 nm including a recess of 120 nm. Details of the different RIE steps and of the metallization will be discussed. First DC-characteristics of a MESFET with an etched Y-gate will be given.

Paper Details

Date Published: 30 January 1990
PDF: 9 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978053
Show Author Affiliations
H. Hubner, Siemens AG (Germany)
W. Pilz, Fraunhofer-Institut fur Mikrostrukturtechnik (Germany)
G. Belle, Siemens AG (Germany)
M. Franosch, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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