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Proceedings Paper

Profile Control And Stringer Removal During Plasma Etch Of Submicrometer Polysilicon Lines
Author(s): Barbara Haselden; Paula Peavey; Bill Elicson; Tofael Ahmed
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Paper Abstract

Polysilicon etch profile is examined as a function of process variation for submicrometer-patterned polysilicon on gate oxide. A Lam Research Rainbow 4400 single-wafer etcher was used to etch polysilicon wafers for a variety of bulk etch and overetch process combinations in order to establish trends for polysilicon etch profile using photoresist and oxide masks. Scanning electron microscope analysis was completed to determine the resulting polysilicon profile for each combination, and process trends for profile were established. A process which demonstrated profile control, critical dimension control and high oxide selectivity after extended overetch was then used to etch polysilicon lines on gate oxide over underlying topography. Scanning electron microscope analysis was completed to determine the effectiveness of the process in removing the polysilicon stringer while maintaining a vertical profile, critical dimension loss of less than 0.1 um, and gate oxide loss of less than 50 A.

Paper Details

Date Published: 30 January 1990
PDF: 13 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978052
Show Author Affiliations
Barbara Haselden, Lam Research (United States)
Paula Peavey, Lam Research (United States)
Bill Elicson, Lam Research (United States)
Tofael Ahmed, Xerox Corporation (United States)

Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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