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Proceedings Paper

Magnetron-Enhanced Etching Of Photoresist For Sub-Micron Patterning
Author(s): A. Selino; M. Siegel; R. Lombaerts
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Paper Abstract

Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposure and devolopment of photoresist on reflective and severe topographies. Two processes developed to meet these challenges are Multi-Level Resist processing and the Dry Development of Photoresist. Critical to both of these processes is the need for a productive, >4000A/min, anisotropic etch of photoresist with critical dimension loss of <0.05um.

Paper Details

Date Published: 30 January 1990
PDF: 15 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978046
Show Author Affiliations
A. Selino, Materials Research Corp. (United States)
M. Siegel, Materials Research Corp. (United States)
R. Lombaerts, UCB Electronics (Belgium)


Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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