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Proceedings Paper

Submicron Single-Layer Lithography Using Reactive Ion Etching
Author(s): George R. Misium; Cesar M. Garza; Monte A. Douglas; Cecil J. Davis; Robert R. Doering
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Paper Abstract

This paper describes the application of reactive ion etching to submicron single-layer lithography. It is shown that the etch selectivity of silicon containing resists is a strong function of the ion energy; that is, the selectivity increases for low ion energies. That supports the use of magnetically enhanced ion etchers for the development of single-layer silylated photoresists since the ion energy in these reactors is low for most process conditions. This paper shows that by a proper design of the reactor and the process good selectivity can also be achieved in a reactive ion etcher. This allows for the use of a simple reactor for some dry-develop lithography applications. The conditions leading to good selectivity as well as several submicron applications are described in this paper.

Paper Details

Date Published: 30 January 1990
PDF: 6 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978044
Show Author Affiliations
George R. Misium, Texas Instruments, Inc. (United States)
Cesar M. Garza, Texas Instruments, Inc. (United States)
Monte A. Douglas, Texas Instruments, Inc. (United States)
Cecil J. Davis, Texas Instruments, Inc. (United States)
Robert R. Doering, Texas Instruments, Inc. (United States)


Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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