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Proceedings Paper

Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists
Author(s): James W. Thackeray; John F. Bohland; Edward K. Pavelchek,; George W. Orsula; Andrew W. McCullough; Susan K. Jones; Stephen M. Bobbio
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Paper Abstract

This paper describes continuing efforts in the development of Acid Hardened Resist (AHR) systems for use in deep UV photolithography. The Silylated AHR (SAHR) process treats a highly absorbing resist, such as XP-8928, with trimethylsilyldiethylamine. The exposed, crosslinked areas show virtually no reactivity with the silylating agent, and the unexposed areas incorporate 10 to 12% by weight silicon in the film. The silicon appears to incorporate from the exterior in a constant concentration, consistent with Case II diffusion. Subsequent dry etching leads to a positive tone image. The contrast is 5, and the photospeed is ~10 mJ/cm2. Resolution of 0.5 μm line/space pairs has been demonstrated, although substantial proximity effects are encountered.

Paper Details

Date Published: 30 January 1990
PDF: 10 pages
Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978041
Show Author Affiliations
James W. Thackeray, Shipley Company, Inc. (United States)
John F. Bohland, Shipley Company, Inc. (United States)
Edward K. Pavelchek,, Shipley Company, Inc. (United States)
George W. Orsula, Shipley Company, Inc. (United States)
Andrew W. McCullough, Shipley Company, Inc. (United States)
Susan K. Jones, MCNC (United States)
Stephen M. Bobbio, MCNC (United States)


Published in SPIE Proceedings Vol. 1185:
Dry Processing for Submicrometer Lithography
James A. Bondur; Alan R. Reinberg, Editor(s)

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