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Proceedings Paper

Molecular beam epitaxy of HgCdTe on (211)B CdZnTe
Author(s): Weiqiang Wang; Lu Chen; Renjie Gu; Chuan Shen; Xiangliang Fu; Yuying Guo; Gao Wang; Feng Yang; Li He
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Paper Abstract

The recent research results on molecular beam epitaxy of HgCdTe on CdZnTe were presented. The CdZnTe substrates mounting process, under protective atmosphere, was essential to avoid substrate oxidation. It was demonstrated by in-situ reflection high-energy electron diffraction (RHEED), during deoxide process. Concerning the poor thermal conductivity of CdZnTe, good uniformity of HgCdTe on CdZnTe is hard to obtained, compared with the epitaxy on GaAs or Si. It was found that the crystal quality of HgCdTe/CdZnTe was strongly temperature dependent. According to good morphology, crystal quality and maintenance efficiency, the proper growth temperature range of HgCdTe/CdZnTe is 191~193°C. By the enhanced thermal contact sticking during substrate mounting, the uniformity of HgCdTe on CdZnTe was improved, including Cd composition, morphology, as well as crystal quality. In addition, proper in-suit high temperature anneal can reduce dislocation density of HgCdTe epilayers about half order of magnitude. High quality uniform HgCdTe epilayers on 30mm×30mm CdZnTe Substrates were obtained under the optimized growth condition. The X-ray double-crystal rocking curve (XDRC) full-width at half-maximum (FWHM) values vary in a range of 20~30 arcsec. EPD values are bellow 2×105 cm-2, with the best result of 3×104 cm-2.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190U (15 October 2012); doi: 10.1117/12.977856
Show Author Affiliations
Weiqiang Wang, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Renjie Gu, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Chuan Shen, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Xiangliang Fu, Shanghai Institute of Technical Physics (China)
Yuying Guo, Shanghai Institute of Technical Physics (China)
Gao Wang, Shanghai Institute of Technical Physics (China)
Feng Yang, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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