Share Email Print
cover

Proceedings Paper

Modeling of strain and stress distribution of HgCdTe/CdTe/Si(211) heterostructure
Author(s): Yuan-zhang Wang; Lu Chen; Xiang-liang Fu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The strain and stress distribution in HgCdTe/CdTe/Si heterostructure (Si 500μm, CdTe 10μm, HgCdTe 10μm) were described by theoretical calculation. The results showed that the strain and stress profiles and curvature radius of HgCdTe/CdTe/Si oriented in asymmetry [211] direction, are asymmetric along in-plane direction along [1-1-1] and [01-1]. The strain of epilayer and substrate are both negative at 77K. The stress at the interface is the largest in this heterostructure. The stress in epilayer is tensile while in substrate it is compressive on the side of interface and tensile on the other side. And a quantitative reference of the Si substrate thickness for a hybrid infrared focal plane arrays was provided.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841906 (15 October 2012); doi: 10.1117/12.977794
Show Author Affiliations
Yuan-zhang Wang, Xiamen Univ. of Technology (China)
Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Xiang-liang Fu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

© SPIE. Terms of Use
Back to Top