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Proceedings Paper

N2 atmosphere annealing effect on HgCdTe electrical damage induced by ICP etching process
Author(s): Jian Huang; Zhenhua Ye; Wenting Yin; Hanjie Hu; Chun Lin; Xiaoning Hu; Ruijun Ding; Li He
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Paper Abstract

N2 atmosphere annealing process to recover ICP etching induced damage on p type mercury vacancy HgCdTe film has been exploited in this paper. ICP etching and N2 atmosphere annealing processes were carried out on a series of Hgvacancy-doping p-type HgCdTe samples. The carrier transport and lifetime properties of these samples were characterized by Hall measurement and microwave reflectance method respectively. P-to-n electrical damage of the surface HgCdTe film induced by the ICP etching process was deduced from the polarity inversion of Hall coefficient. The carrier transport and lifetime properties were similar to those of the non-etched samples, indicating that the surface HgCdTe electrical damage was recovered partially by annealing at 210°C for 2 hours. I-V and R-V characteristics curves of photodiodes fabricated on the etched and N2 atmosphere annealing processed MCT samples were also comparable to those of photodiodes on the non-etched MCT samples in the following experiments. These results show that N2 atmosphere annealing process is a readily available and promising recovering technique for HgCdTe ICP etching induced damage.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192I (15 October 2012); doi: 10.1117/12.977400
Show Author Affiliations
Jian Huang, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Zhenhua Ye, Shanghai Institute of Technical Physics (China)
Wenting Yin, Shanghai Institute of Technical Physics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Hanjie Hu, Chongqing Helicopter Investment Co., Ltd. (China)
Chun Lin, Shanghai Institute of Technical Physics (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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