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Proceedings Paper

Laser removal of positive-tone diazonaphthoquinone / novolak resist without occurring laser-induced damage to the silicon wafer
Author(s): Hiroki Muraoka; Tomosumi Kamimura; Yuki Yamana; Yoshiaki Matsura; Hideo Horibe
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Paper Abstract

Positive-tone diazonaphthoquinone / novolak (DNQ / novolak) resist was stripped from Si wafer by using a pulsed laser beam from visible to near infrared. Silicon wafer with resist was sunk in water to utilize irradiated laser energy effectively. When the resist was irradiated with the fundamental wavelength of the Nd:YAG laser, the resist was stripped from the Si wafer. No damage could be detected from the processed silicon wafer surface. The resist stripping effect in water condition was improved due to both the thermal expansion of the Si wafer and pressure from water. And also, laser irradiation of wavelength 532 nm, having large photon energy, was found to have a higher resist stripping effect than that of wavelength 1064 nm.

Paper Details

Date Published: 4 December 2012
PDF: 5 pages
Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301V (4 December 2012); doi: 10.1117/12.977338
Show Author Affiliations
Hiroki Muraoka, Osaka Institute of Technology (Japan)
Tomosumi Kamimura, Osaka Institute of Technology (Japan)
Yuki Yamana, Osaka Institute of Technology (Japan)
Yoshiaki Matsura, Osaka Institute of Technology (Japan)
Hideo Horibe, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 8530:
Laser-Induced Damage in Optical Materials: 2012
Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; M J Soileau, Editor(s)

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