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Proceedings Paper

Comparison of critical dimension measurements of a mask inspection system with a CD-SEM
Author(s): Jan P. Heumann; Albrecht Ullrich; Clemens S. Utzny; Stefan Meusemann; Frank Kromer; John M. Whittey; Edgardo Garcia; Mark Wagner; Norbert J. Schmidt
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Paper Abstract

Critical dimension uniformity (CDU) is an important parameter for photomask and wafer manufacturing. In order to reduce long-range CD variation, compensation techniques for mask writers and scanners have been developed. Both techniques require mask CD measurements with high spatial sampling. Scanning electron microscopes (SEMs), which provide CD measurements at very high precision, cannot in practice provide the required spatial sampling due to their low speed. In contrast mask inspection systems, some of which have the ability to perform optical CD measurements with very high sampling frequencies, are an interesting alternative. In this paper we evaluate the CDU measurement results with those of a CD-SEM.

Paper Details

Date Published: 8 November 2012
PDF: 9 pages
Proc. SPIE 8522, Photomask Technology 2012, 85220G (8 November 2012); doi: 10.1117/12.977248
Show Author Affiliations
Jan P. Heumann, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Albrecht Ullrich, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Clemens S. Utzny, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Stefan Meusemann, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Frank Kromer, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
John M. Whittey, KLA-Tencor Corp. (United States)
Edgardo Garcia, KLA-Tencor Corp. (United States)
Mark Wagner, KLA-Tencor Corp. (United States)
Norbert J. Schmidt, KLA-Tencor Germany (Germany)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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