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Proceedings Paper

Ohmic contact and electrical property in InAs/GaSb superlattice material
Author(s): Liang Zhang; Xiaolei Zhang; Lei Zhang
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Paper Abstract

InAs/GaSb superlattice material was grown on GaAs substrates by Molecular-beam epitaxy(MBE). To study the Ohmic contact and electrical property of InAs/GaSb superlattices, the Au//Ti/InAs/GaSb superlattices contact was fabricated using heated electron evaporation methods on the surface of InAs/GaSb superlattices. The Au//Ti/InAs/GaSb superlattices contact character was analyzed by transmission line model. The results show that Au//Ti/InAs/GaSb superlattices contact is the Ohmic contact with good contact resistivity. And it meets requirement of Ohmic contact with the perfect quality. The electrical properties of InAs/GaSb superlattices were tested by Van Der Pauw. That means the leak current decrease as the carriers density reaches to a lower level. At the meantime, the detector obtains a better background noise and energy resolution.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192V (15 October 2012); doi: 10.1117/12.977228
Show Author Affiliations
Liang Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Xiaolei Zhang, Luoyang Optoelectro Technology Development Ctr. (China)
Lei Zhang, Luoyang Optoelectro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 8419:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Yadong Jiang; Junsheng Yu; Zhifeng Wang, Editor(s)

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