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Proceedings Paper

A simulation of chrome migration and its prevention in photomask
Author(s): Jong-Min Kim; Ik-Boum Hur; Dong-Heok Lee; Sang-Soo Choi
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Paper Abstract

Scanner expose condition is simulated to reproduce Chrome (Cr) migration on COG mask, known as a new type of mask degradation, with high energy fluency ArF acceleration tool. Contact hole size is decreased by forming rim inside sidewall of contact hole. CD change is observed as expose energy accumulates. Bridge defect is found on the unexposed line end feature adjacent to grounded pattern. Grounded mask showed much worse Cr migration than not grounded one. It may be analogized that the driving forces of Cr migration is relatively higher ArF energy (6.8eV) than self diffusion activation energy of Cr (3.5eV). Isolated exposed pattern will be positively charged by photovoltaic effect. Electric field potential with adjacent ground pattern formed by photovoltaic effect possibly boosts the Cr migration and material loss. New prevention treatment has been developed to mitigate Cr migration and it worked quite well. Cr migration by ArF expose wasn't found even grounded condition.

Paper Details

Date Published: 30 June 2012
PDF: 8 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844104 (30 June 2012); doi: 10.1117/12.977217
Show Author Affiliations
Jong-Min Kim, PKL Photronics (Korea, Republic of)
Ik-Boum Hur, PKL Photronics (Korea, Republic of)
Dong-Heok Lee, PKL Photronics (Korea, Republic of)
Sang-Soo Choi, PKL Photronics (Korea, Republic of)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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