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Proceedings Paper

Process challenges in advanced photomask etch processes
Author(s): Chang Ju Choi; Karmen Yung; Cheng-Hsin Ma; Ganesh Vanamu
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Paper Abstract

Plasma etch challenges such as resolution enhancement, etch error reduction, and process reliability improvement are investigated in next generation phase shift photomask processes for ≤14nm technology node. Etch resolution predominantly depends on etch bias and linearity while overall process resolution is also determined by resist thickness. Several resolution enhancement techniques including thin hardmasks and new absorber materials are tested in terms of etch profile, linearity, and minimum feature printability. New approaches provide improvement on etch bias as well as good pattern fidelity for sub-resolution patterns. Reduction of etch profile errors is also critical to maintain high pattern resolution. It is found that some of etch profile distortion can be minimized by changing plasma conditions. To meet tighter process reliability requirement, we investigated a couple of advanced process control techniques in alternating phase shift mask manufacturing. Integration of real-time monitor is essential to obtain good process reliability with no degradation on defects or throughput.

Paper Details

Date Published: 8 November 2012
PDF: 9 pages
Proc. SPIE 8522, Photomask Technology 2012, 85220Q (8 November 2012); doi: 10.1117/12.977137
Show Author Affiliations
Chang Ju Choi, Intel Corp. (United States)
Karmen Yung, Intel Corp. (United States)
Cheng-Hsin Ma, Intel Corp. (United States)
Ganesh Vanamu, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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