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Proceedings Paper

Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation
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Paper Abstract

We report on our research in power scaling OPSL around 1 μm to exceed 100W per chip by combining a rigorous quantum design of an optimized MQW epitaxial structure, highly accurate and reproducible wafer growth and an efficient thermal management strategy. Recently we have utilized these state-of-the-art optimized OPSL chips to achieve a new record for a mode-locked OPSL with an intra-cavity SESAM. The average output power of the laser in the optimum operation point of mode-locked operation was 5.1W while being pumped with 25W of net pump power. This corresponds to a pulse energy of 3 nJ and a pulse peak power of 3.8 kW.

Paper Details

Date Published: 8 November 2012
PDF: 8 pages
Proc. SPIE 8547, High-Power Lasers 2012: Technology and Systems, 85470I (8 November 2012); doi: 10.1117/12.976979
Show Author Affiliations
Alexandre Laurain, College of Optical Sciences, The Univ. of Arizona (United States)
Maik Scheller, College of Optical Sciences, The Univ. of Arizona (United States)
Nonlinear Control Strategies Inc. (United Kingdom)
Tsuei-Lian Wang, College of Optical Sciences, The Univ. of Arizona (United States)
Jorg Hader, College of Optical Sciences, The Univ. of Arizona (United States)
Nonlinear Control Strategies, Inc. (United States)
Jerome V. Moloney, College of Optical Sciences, The Univ. of Arizona (United States)
Nonlinear Control Strategies, Inc. (United States)
Stephan W. Koch, College of Optical Sciences, The Univ. of Arizona (United States)
Nonlinear Control Strategies, Inc. (United States)
Philipps-Univ. Marburg (Germany)
Bernd Heinen, Philipps-Univ. Marburg (Germany)
Martin Koch, Philipps-Univ. Marburg (Germany)
Bernardette Kunert, Philipps-Univ. Marburg (Germany)
NAsP III/V GmbH (Germany)
Wolfgang Stolz, Philipps-Univ. Marburg (Germany)
NAsP III/V GmbH (Germany)


Published in SPIE Proceedings Vol. 8547:
High-Power Lasers 2012: Technology and Systems
Harro Ackermann; Willy L. Bohn, Editor(s)

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