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Proceedings Paper

Reliability Of AlGaas/Gaas Laser Diodes Grown By Metalorganic Chemical Vapor Deposition
Author(s): D. Dreisewerd; W. Fritz; D. Begley; S. Schwedt; G. Elliott
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Paper Abstract

The results from an extensive life test of wide stripe laser diodes operating in the 808 nm wavelength region and at a heatsink temperature of -20°C are reported. Double heterostructure laser diode wafer material, grown by metalorganic chemical vapor deposition (MOCVD) was processed with 60 micron wide oxide stripes and 150 micron long high reflectivity/passivated cavities. Devices were mounted p-side down on BeO heatsinks with indium solder. Stringent screening and burn-in criteria were applied to the device population prior to selection for long term test. The lasers were operated constant current at 1.4 times threshold (approximately 50 mW initial output power). Based on gradual degradation of output power, during the 10,000 hour test, a median lifetime of greater than 30 years is projected.

Paper Details

Date Published: 2 May 1988
PDF: 13 pages
Proc. SPIE 0885, Free-Space Laser Communication Technologies, (2 May 1988); doi: 10.1117/12.976556
Show Author Affiliations
D. Dreisewerd, McDonnell Douglas Astronautics Company (United States)
W. Fritz, McDonnell Douglas Astronautics Company (United States)
D. Begley, McDonnell Douglas Astronautics Company (United States)
S. Schwedt, McDonnell Douglas Astronautics Company (United States)
G. Elliott, McDonnell Douglas Astronautics Company (United States)

Published in SPIE Proceedings Vol. 0885:
Free-Space Laser Communication Technologies
David L. Begley; Gerhard A. Koepf, Editor(s)

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