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Proceedings Paper

Poly-Si TFTs for Active-Matrix LCDs
Author(s): Shinji Morozumi; Hiroyuki Ohshima
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Paper Abstract

Polycrystalline silicon thin film transistors (poly-Si TFTs) have been applied to active-matrix liquid-crystal displays (LCDs) because of high mobility and stability which enable the integration of driver circuits on the glass substrates. For small size LCDs up to 5 inches in diagonal, high temperature processes using a thermally grown gate oxide film have been used. Poly-Si TFT driver circuits with sufficient electrical characteristics can be integrated on the substrates in such displays. For large area displays of up to 10 inches in diagonal, a low temperature process which allows fabrication of poly-Si TFTs on normal glass substrates at about 600°C has been developed. The electrical properties of low temperature processed poly-Si TFT circuits have approached the level necessary for integration. To increase the carrier mobility and decrease the threshold voltage, plasma hydrogenation, solid-phase grain growth, and laser annealing have been used.

Paper Details

Date Published: 25 July 1989
PDF: 7 pages
Proc. SPIE 1080, Liquid Crystal Chemistry, Physics, and Applications, (25 July 1989); doi: 10.1117/12.976411
Show Author Affiliations
Shinji Morozumi, Seiko Epson Corporation (Japan)
Hiroyuki Ohshima, Seiko Epson Corporation (Japan)


Published in SPIE Proceedings Vol. 1080:
Liquid Crystal Chemistry, Physics, and Applications
J. William Doane; Zvi Yaniv, Editor(s)

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