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Proceedings Paper

Screening Test Procedure For Long Life Single Mode Step Index Separate Confinement Heterostructure Single Quantum Well (Sinsch-Sqw) Laser Diodes
Author(s): William Fritz
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Paper Abstract

An experiment was conducted to establish an effective burn-in and screening procedure for long life SINSCH-SQW laser diodes. The laser diodes were grown by MOCVD and processed with 20μ wide oxide defined stripes. The devices had a high reflective back facet coating with a small etalon bonded to a passivated front facet to ensure single mode operation. The laser diodes were bonded p-side up to copper heat sinks using indium solder. A total of 48 devices were selected prior to burn-in and were operated at 200mA constant current for 2000 hours at an average heat sink temperature of 55°C. The average initial output power was 45mW per device. At the end of the test, the output powers ranged from lmW to 85mW. Most of the devices with the low final power failed catastrophically within 24 hours from the start of the test. Many laser diodes showed very little change in output power while others degraded gradually by varying amounts. Failure analysis showed that failures were facet, bulk, or heat sink related. The temporal output power degradations (i.e., gradual degradation, etc.) can be explained by the identified failure mechanisms. From the test results and failure analysis, a screening strategy based on inspection and burn-in can be devised to reject devices that may fail early. Also, improvements in processing can provide potential yield improvements. After accounting for degradation related to processing, a very long material lifetime is predicted for these SINSCH-SQW laser diodes.

Paper Details

Date Published: 22 June 1989
PDF: 8 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976393
Show Author Affiliations
William Fritz, Mcdonnell Douglas Astronautics Company (United States)


Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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