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Proceedings Paper

High Frequency Characteristics Of 1.3 µm Lasers
Author(s): D. Renner; W. H. Cheng; J. Pooladdej; A.. Appelbaum; K. L. Hess; S. W. Zehr
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Paper Abstract

A review of high frequency InGaAsP/InP laser structures is presented. The performance of these devices is analyzed based on a rate equations model. The effects of packaging and device parasitics on high speed modulation are also considered through a circuit configuration. The model is used to compare the relative advantages of the main high frequency laser structures in order to maximize the obtainable modulation bandwidth. The characteristics of buried crescent lasers with semi-insulating current-blocking layers are highlighted. A 3-dB direct modulation bandwidth of 11 GHz together with 42-mW output power has been achieved with this device.

Paper Details

Date Published: 22 June 1989
PDF: 10 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976385
Show Author Affiliations
D. Renner, Rockwell International Corporation (United States)
W. H. Cheng, Rockwell International Corporation (United States)
J. Pooladdej, Rockwell International Corporation (United States)
A.. Appelbaum, Rockwell International Corporation (United States)
K. L. Hess, Rockwell International Corporation (United States)
S. W. Zehr, Rockwell International Corporation (United States)


Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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