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Proceedings Paper

Computer Modeling Of GRIN-SCH-SQW Diode Lasers
Author(s): S. R. Chinn; P. S. Zory; A. R. Reisinger
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Paper Abstract

A computer model for the optical gain of graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) Alx Ga1-xAs diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain vs current density data for two different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, the observed high-gain discontinuity in T° vs temperature is explained, and new predictions are made concerning T° discontinuities at gain cross-overs.

Paper Details

Date Published: 22 June 1989
PDF: 10 pages
Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); doi: 10.1117/12.976367
Show Author Affiliations
S. R. Chinn, General Electric Company (United States)
P. S. Zory, University of Florida (United States)
A. R. Reisinger, General Electric Company (United States)


Published in SPIE Proceedings Vol. 1043:
Laser Diode Technology and Applications
Luis Figueroa, Editor(s)

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